Deposited silicon high-speed integrated electro-optic modulator
نویسندگان
چکیده
منابع مشابه
Deposited silicon high-speed integrated electro-optic modulator.
We demonstrate a micrometer-scale electro-optic modulator operating at 2.5 Gbps and 10 dB extinction ratio that is fabricated entirely from deposited silicon. The polycrystalline silicon material exhibits properties that simultaneously enable high quality factor optical resonators and sub-nanosecond electrical carrier injection. We use an embedded p(+)n(-)n(+) diode to achieve optical modulatio...
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Article history: Received 9 December 2009 Received in revised form 22 March 2010 Accepted 22 March 2010 Here we propose a design for a novel broadband silicon electro-optic absorption modulator. The device is simply a 100 μm long silicon waveguide with a Schottky diode integrated in it. Modulation is achieved through free-carrier absorption, not interference effects, enabling operation over the...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2009
ISSN: 1094-4087
DOI: 10.1364/oe.17.005118